Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds
Identifieur interne : 000437 ( Main/Repository ); précédent : 000436; suivant : 000438Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds
Auteurs : RBID : Pascal:13-0124033Descripteurs français
- Pascal (Inist)
- Wicri :
- concept : Composé minéral.
English descriptors
- KwdEn :
Abstract
The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k=2) and bulk specimens (k=3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 001098
Links to Exploration step
Pascal:13-0124033Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface electronic properties of polycrystalline bulk and thin film In<sub>2</sub>O<sub>3</sub>(ZnO)<sub>k</sub> compounds</title><author><name sortKey="Mitchell Hopper, E" uniqKey="Mitchell Hopper E">E. Mitchell Hopper</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science & Engineering, Northwestern University</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name>QIMIN ZHU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science & Engineering, Northwestern University</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author><author><name sortKey="Gassmann, J Rgen" uniqKey="Gassmann J">J Rgen Gassmann</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Materials Science, Darmstadt University of Technology</s1><s2>Darmstadt</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Klein, Andreas" uniqKey="Klein A">Andreas Klein</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Materials Science, Darmstadt University of Technology</s1><s2>Darmstadt</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Mason, Thomas O" uniqKey="Mason T">Thomas O. Mason</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science & Engineering, Northwestern University</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, IL 60208</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0124033</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0124033 INIST</idno><idno type="RBID">Pascal:13-0124033</idno><idno type="wicri:Area/Main/Corpus">001098</idno><idno type="wicri:Area/Main/Repository">000437</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Indium</term><term>Inorganic compounds</term><term>Ionization potential</term><term>Kelvin probe</term><term>Photoelectron spectroscopy</term><term>Surface properties</term><term>Thin films</term><term>Transition element compounds</term><term>Work functions</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété surface</term><term>Couche mince</term><term>Indium</term><term>Spectrométrie photoélectron</term><term>Sonde Kelvin</term><term>Potentiel ionisation</term><term>Travail sortie</term><term>Oxyde de zinc</term><term>O Zn</term><term>ZnO</term><term>In</term><term>Composé de métal de transition</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The surface electronic potentials of In<sub>2</sub>O<sub>3</sub>(ZnO)<sub>k</sub> compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k=2) and bulk specimens (k<sub>=</sub>3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In<sub>2</sub>O<sub>3</sub>. The work functions and Fermi levels spanned a range similar to those of the basis oxides In<sub>2</sub>O<sub>3</sub> and ZnO, and the ionization potential was similar to that of both In<sub>2</sub>O<sub>3</sub> and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>264</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Surface electronic properties of polycrystalline bulk and thin film In<sub>2</sub>O<sub>3</sub>(ZnO)<sub>k</sub> compounds</s1></fA08><fA11 i1="01" i2="1"><s1>MITCHELL HOPPER (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>QIMIN ZHU</s1></fA11><fA11 i1="03" i2="1"><s1>GASSMANN (Jürgen)</s1></fA11><fA11 i1="04" i2="1"><s1>KLEIN (Andreas)</s1></fA11><fA11 i1="05" i2="1"><s1>MASON (Thomas O.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science & Engineering, Northwestern University</s1><s2>Evanston, IL 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Materials Science, Darmstadt University of Technology</s1><s2>Darmstadt</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>811-815</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000506371321260</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0124033</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The surface electronic potentials of In<sub>2</sub>O<sub>3</sub>(ZnO)<sub>k</sub> compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k=2) and bulk specimens (k<sub>=</sub>3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In<sub>2</sub>O<sub>3</sub>. The work functions and Fermi levels spanned a range similar to those of the basis oxides In<sub>2</sub>O<sub>3</sub> and ZnO, and the ionization potential was similar to that of both In<sub>2</sub>O<sub>3</sub> and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété surface</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Surface properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectrométrie photoélectron</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoelectron spectroscopy</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Sonde Kelvin</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Kelvin probe</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Sonda Kelvin</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Potentiel ionisation</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ionization potential</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Travail sortie</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Work functions</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>15</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>O Zn</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>34</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé de métal de transition</s0><s5>62</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>62</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé minéral</s0><s5>63</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>63</s5></fC03><fN21><s1>098</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000437 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000437 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0124033
|texte= Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds
}}
| This area was generated with Dilib version V0.5.77. |  |